View H11D2_346733.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PHOTOTRANSISTOR, 5.3 KV, TRIOS(R) HIGH BVCER VOLTAGE OPTOCOUPLER
FEATURES * CTR at IF=10 mA, BVCER=10 V: 20% * Good CTR Linearity with Forward Current * Low CTR Degradation * Very High Collector-Emitter Breakdown Voltage - H11D1/H11D2, BVCER=300 V - H11D3, BVCER=200 V * Isolation Test Voltage: 5300 VACRMS * Low Coupling Capacitance * High Common Mode Transient Immunity * Phototransistor Optocoupler in 6 Pin DIP Package with Base Connection * Field Effect Stable: TRIOS* V * VDE 0884 Available with Option 1 * Underwriters Lab File #E52744 * Applications - Telecommunications - Replace Relays
DE
H11D1/H11D2/H11D3
Dimensions in inches (mm)
Pin One ID 3 .248 (6.30) .256 (6.50) 4 5 6 2 1 Anode 1 Cathode 2 NC 3 6 Base 5 Collector 4 Emitter
.335 (8.50) .343 (8.70) .039 (1.00) Min. 4 typ. .018 (0.45) .022 (0.55) .300 (7.62) typ. .130 (3.30) .150 (3.81) 18 typ. .020 (.051) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. .010 (.25) .014 (.35) .300 (7.62) .347 (8.82) .110 (2.79) .150 (3.81)
DESCRIPTION The H11D1/2/3 are optocouplers with very high BVCER. They are intended for telecommunications applications or any DC application requiring a high blocking voltage. *TRIOS--TRansparent IOn Shield
Maximum Ratings (TA=25C) Emitter Reverse Voltage ................................................................................... 6 V DC Forward Current ........................................................................60 mA Surge Forward Current (tp 10 s) ................................................. 2.5 A Total Power Dissipation ............................................................... 100 mW Detector Collector-Emitter Voltage H11D1/2 ......................................................................................300 V H11D3 .........................................................................................200 V Collector-Base Voltage H11D1/2 ......................................................................................300 V H11D3 .........................................................................................200 V Emitter-Base Voltage .......................................................................... 7 V Collector Current .......................................................................... 100 mA Total Power Dissipation ............................................................... 300 mW Package Isolation Test Voltage (between emitter and detector refer to climate DIN 40046, part 2, Nov. 74).................... 5300 VACRMS Insulation Thickness between Emitter and Detector .....................0.4 mm Creepage Distance ................................................................................ 7 mm Clearance Distance................................................................................ 7 mm Comparative Tracking Index (per DIN IEC 112/VDE 0303, part 1) ............................................... 175 Isolation Resistance VIO=500 V, TA=25C .........................................................................1012 VIO=500 V, TA=100C.......................................................................1011 Storage Temperature Range ..........................................-55C to +150C Operating Temperature Range ......................................-55C to +100C Junction Temperature...................................................................... 100C Soldering Temperature (max. 10 sec., dip soldering: distance to seating plane 1.5 mm).................... 260C
5-1
This document was created with FrameMaker 4.0.4
Characteristics (TA=25C, unless otherwise specified)
Symbol Emitter Forward Voltage Reverse Voltage Reverse Current Capacitance Thermal Resistance Detector Voltage, Collector-Emitter H11D1/H11D2 H11D3 Voltage, Emitter-Base Capacitance BVCER BVEBO CCE CCB CEB RthJA 300 200 7 7 8 38 250 V V V pF pF pF K/W ICE=1 mA, RBE=1 M IEB=100 A VCE=10 V, f=1 MHz VCB=10 V, f=1 MHz VEB=5 V, f=1 MHz VF VR IR CO RthJA 6 0.01 25 750 10 1.1 1.5 V V mA pF K/W IF=10 mA IR=10 mA VR=6 V VR=0 V,f=1 MHz Min Typ Max Unit Condition
Thermal Resistance Package Coupling Capacitance Coupling Transfer Ratio Collector-Emitter, Saturation Voltage Leakage Current, Collector-Emitter H11D1/H11D2 H11D3 Leakage Current, Collector-Emitter H11D1/H11D2 H11D3
CC IC/IF VCEsat ICER ICER 20
0.6
pF % IF=10 mA, VCE=10 V, RBE=1 M IF=10 mA, IC=0.5 mA, RBE=1 M VCE=200 V, RBE=1 M VCE=100 V, RBE=1 M VCE=200 V, RBE=1 M, TA=100C VCE=100 V, RBE=1 M, TA=100C
0.25
0.4 100 100 250 250
V nA nA A A
Figure 1. Switching times measurement-test circuit and waveforms
IF RL IC 47 VCC VO GND Input 0 tpdon Output td 0 10% 50% 90% tr
ton tpdof ts
toff tr 10% 50%
90%
Switching Times (typ.) IC=2 mA (to be adjusted by varying IF), RL=100, TA=25C, VCC=10 V
Description Turn-On Time Rise Time Turn-Off Time Fall Time Symbol tON tR tOFF tF Values 5 2.5 6 5.5 Unit s s s s
H11D1/2/3
5-2
Figure 2. Current transfer ratio (typ.) VCE=10 V, TA=25C, normalized to IF=10 mA, NCTR=f(IF)
Figure 5. Output characteristics (typ.) TA=25C, ICE=f(VCE, IF)
Figure 8. Permissible loss diode IF= f(TA)
Figure 3. Diode forward voltage (typ.) VF=f(IF,TA)
Figure 6. Transistor capacitances (typ.) TA=25C, f=1 MHz, CCE=f(VCE) CCB=f (VCB), CEB=f (VEB)
Figure 9. Permissible power dissipation PIOT=f(TA)
Figure 4. Output characteristics (typ.) TA=25C, ICE=f(VCE, IB)
Figure 7. Collector-emitter leakage current (typ.) IF=0, RBE=1 M, ICER=f(VCE)
H11D1/2/3
5-3

▲Up To Search▲

Price & Availability of H11D2

	To Download H11D2 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .